IS43DR82560C-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Organization :

256MX8

Memory Width :

8

Access Time :

450ps

Height Seated (Max) :

1.2mm

ECCN Code :

EAR99

Clock Frequency :

333MHz

Mounting Type :

Surface Mount

Write Cycle Time - Word, Page :

15ns

Factory Lead Time :

8 Weeks

Terminal Pitch :

0.8mm

RoHS Status :

ROHS3 Compliant

Sequential Burst Length :

48

Refresh Cycles :

8192

Surface Mount :

yes

Package / Case :

60-TFBGA

Number of Functions :

1

Packaging :

Tray

Length :

10.5mm

Additional Feature :

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Width :

8mm

Supply Voltage-Max (Vsup) :

1.9V

Memory Size :

2Gb 256M x 8

Standby Current-Max :

0.03A

Operating Mode :

SYNCHRONOUS

Terminal Position :

BOTTOM

I/O Type :

COMMON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Density :

2147483648 bit

Memory Type :

Volatile

Qualification Status :

Not Qualified

Memory Interface :

Parallel

Supply Current-Max :

0.455mA

Power Supplies :

1.8V

Output Characteristics :

3-STATE

Number of Ports :

1

Supply Voltage :

1.8V

Supply Voltage-Min (Vsup) :

1.7V

JESD-30 Code :

R-PBGA-B60

Interleaved Burst Length :

48

Number of Terminations :

60

Memory Format :

DRAM

Voltage - Supply :

1.7V~1.9V

Operating Temperature :

-40°C~85°C TA