IS43DR82560C-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Surface Mount :

yes

Memory Format :

DRAM

Operating Mode :

SYNCHRONOUS

Power Supplies :

1.8V

Memory Width :

8

Standby Current-Max :

0.03A

Output Characteristics :

3-STATE

Memory Size :

2Gb 256M x 8

ECCN Code :

EAR99

Memory Interface :

Parallel

JESD-30 Code :

R-PBGA-B60

Number of Terminations :

60

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Supply Current-Max :

0.455mA

Clock Frequency :

333MHz

Organization :

256MX8

Supply Voltage-Min (Vsup) :

1.7V

Sequential Burst Length :

48

Supply Voltage :

1.8V

Access Time :

450ps

Voltage - Supply :

1.7V~1.9V

Qualification Status :

Not Qualified

Width :

8mm

Length :

10.5mm

Supply Voltage-Max (Vsup) :

1.9V

Terminal Pitch :

0.8mm

Number of Ports :

1

Number of Functions :

1

I/O Type :

COMMON

Interleaved Burst Length :

48

Mounting Type :

Surface Mount

Write Cycle Time - Word, Page :

15ns

Package / Case :

60-TFBGA

Terminal Position :

BOTTOM

Operating Temperature :

0°C~85°C TC

Height Seated (Max) :

1.2mm

Packaging :

Tray

Factory Lead Time :

8 Weeks

Memory Type :

Volatile

Additional Feature :

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Memory Density :

2147483648 bit

Refresh Cycles :

8192