IS43DR82560C-25DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Factory Lead Time :

8 Weeks

Number of Terminations :

60

Memory Density :

2147483648 bit

Width :

8mm

Memory Interface :

Parallel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Memory Width :

8

Supply Voltage :

1.8V

Supply Voltage-Max (Vsup) :

1.9V

Number of Functions :

1

Height Seated (Max) :

1.2mm

Terminal Pitch :

0.8mm

Memory Format :

DRAM

Length :

10.5mm

Supply Voltage-Min (Vsup) :

1.7V

Mounting Type :

Surface Mount

Clock Frequency :

400MHz

Operating Temperature :

0°C~85°C TC

Terminal Position :

BOTTOM

Number of Ports :

1

Surface Mount :

yes

ECCN Code :

EAR99

JESD-30 Code :

R-PBGA-B60

Additional Feature :

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Write Cycle Time - Word, Page :

15ns

RoHS Status :

ROHS3 Compliant

Memory Size :

2Gb 256M x 8

Operating Mode :

SYNCHRONOUS

Packaging :

Tray

Memory Type :

Volatile

Organization :

256MX8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

60-TFBGA

Voltage - Supply :

1.7V~1.9V

Access Time :

400ps