IS43DR82560B-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Temperature :

-40°C~85°C TA

I/O Type :

COMMON

Organization :

256MX8

Additional Feature :

AUTO/SELF REFRESH

Memory Interface :

Parallel

Terminal Position :

BOTTOM

Memory Type :

Volatile

Terminal Pitch :

0.8mm

Sequential Burst Length :

48

Supply Current-Max :

0.417mA

HTS Code :

8542.32.00.36

Output Characteristics :

3-STATE

Memory Width :

8

Supply Voltage-Max (Vsup) :

1.9V

ECCN Code :

EAR99

Packaging :

Tray

Height Seated (Max) :

1.2mm

Pin Count :

60

Package / Case :

60-TFBGA

Mounting Type :

Surface Mount

Length :

13mm

Memory Density :

2147483648 bit

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Min (Vsup) :

1.7V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

60

Supply Voltage :

1.8V

Qualification Status :

Not Qualified

Power Supplies :

1.8V

Width :

10.5mm

Voltage - Supply :

1.7V~1.9V

Memory Format :

DRAM

Clock Frequency :

333MHz

Number of Ports :

1

Standby Current-Max :

0.03A

Operating Mode :

SYNCHRONOUS

Interleaved Burst Length :

48

Surface Mount :

yes

Number of Functions :

1

Memory Size :

2Gb 256M x 8

Write Cycle Time - Word, Page :

15ns

Access Time :

450ps

Refresh Cycles :

8192

JESD-30 Code :

R-PBGA-B60