IS43DR82560B-25EBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

ECCN Code :

EAR99

Number of Ports :

1

Memory Size :

2Gb 256M x 8

Interleaved Burst Length :

48

Width :

10.5mm

Supply Voltage-Max (Vsup) :

1.9V

Additional Feature :

AUTO/SELF REFRESH

Sequential Burst Length :

48

Memory Width :

8

Number of Functions :

1

Memory Type :

Volatile

Packaging :

Tray

Memory Interface :

Parallel

Memory Format :

DRAM

RoHS Status :

ROHS3 Compliant

Clock Frequency :

400MHz

Organization :

256MX8

Height Seated (Max) :

1.2mm

Write Cycle Time - Word, Page :

15ns

Package / Case :

60-TFBGA

Mounting Type :

Surface Mount

Supply Current-Max :

0.47mA

I/O Type :

COMMON

Memory Density :

2147483648 bit

Length :

13mm

Operating Temperature :

-40°C~85°C TA

Voltage - Supply :

1.7V~1.9V

HTS Code :

8542.32.00.36

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Surface Mount :

yes

Access Time :

400ps

Supply Voltage :

1.8V

Power Supplies :

1.8V

Refresh Cycles :

8192

Terminal Pitch :

0.8mm

Supply Voltage-Min (Vsup) :

1.7V

Output Characteristics :

3-STATE

Number of Terminations :

60

Operating Mode :

SYNCHRONOUS

Pin Count :

60

JESD-30 Code :

R-PBGA-B60

Qualification Status :

Not Qualified

Standby Current-Max :

0.03A