IS43DR82560B-25EBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Refresh Cycles :

8192

Height Seated (Max) :

1.2mm

Terminal Pitch :

0.8mm

Packaging :

Tray

RoHS Status :

ROHS3 Compliant

Memory Type :

Volatile

Length :

13mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Max (Vsup) :

1.9V

Number of Terminations :

60

Qualification Status :

Not Qualified

Sequential Burst Length :

48

Pin Count :

60

Additional Feature :

AUTO/SELF REFRESH

HTS Code :

8542.32.00.36

Write Cycle Time - Word, Page :

15ns

Interleaved Burst Length :

48

Supply Voltage-Min (Vsup) :

1.7V

Memory Width :

8

Package / Case :

60-TFBGA

Memory Size :

2Gb 256M x 8

Number of Ports :

1

Terminal Position :

BOTTOM

Memory Format :

DRAM

Supply Voltage :

1.8V

Supply Current-Max :

0.47mA

ECCN Code :

EAR99

Surface Mount :

yes

Density :

2 GB

Number of Pins :

60

I/O Type :

COMMON

Access Time :

400ps

Output Characteristics :

3-STATE

Number of Functions :

1

Operating Temperature :

0°C~85°C TC

Operating Mode :

SYNCHRONOUS

Standby Current-Max :

0.03A

Address Bus Width :

15b

Operating Supply Voltage :

1.8V

Voltage - Supply :

1.7V~1.9V

Memory Interface :

Parallel

Organization :

256MX8

Mounting Type :

Surface Mount

Max Frequency :

400MHz