IS43DR81280C-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Surface Mount :

yes

Write Cycle Time - Word, Page :

15ns

Number of Functions :

1

JESD-30 Code :

R-PBGA-B60

Sequential Burst Length :

48

Supply Voltage :

1.8V

Packaging :

Tray

Power Supplies :

1.8V

Memory Width :

8

Supply Voltage-Min (Vsup) :

1.7V

Terminal Finish :

TIN SILVER COPPER

Memory Size :

1Gb 128M x 8

Operating Mode :

SYNCHRONOUS

Supply Voltage-Max (Vsup) :

1.9V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Width :

8mm

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

60

JESD-609 Code :

e1

Terminal Pitch :

0.8mm

Memory Format :

DRAM

Interleaved Burst Length :

48

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

COMMON

Output Characteristics :

3-STATE

Peak Reflow Temperature (Cel) :

260

Memory Interface :

Parallel

Factory Lead Time :

8 Weeks

Supply Current-Max :

0.27mA

Clock Frequency :

333MHz

Height Seated (Max) :

1.2mm

Memory Density :

1073741824 bit

Length :

10.5mm

Terminal Position :

BOTTOM

Voltage - Supply :

1.7V~1.9V

Operating Temperature :

-40°C~85°C TA

Additional Feature :

AUTO/SELF REFRESH

Package / Case :

60-TFBGA

RoHS Status :

ROHS3 Compliant

Memory Type :

Volatile

Access Time :

450ps

Refresh Cycles :

8192

Organization :

128MX8

Number of Ports :

1