IS43DR81280C-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Supply Voltage-Max (Vsup) :

1.9V

Height Seated (Max) :

1.2mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

60

Supply Voltage-Min (Vsup) :

1.7V

Terminal Finish :

TIN SILVER COPPER

Clock Frequency :

333MHz

ECCN Code :

EAR99

Operating Mode :

SYNCHRONOUS

I/O Type :

COMMON

JESD-609 Code :

e1

Access Time :

450ps

Terminal Position :

BOTTOM

Memory Size :

1Gb 128M x 8

JESD-30 Code :

R-PBGA-B60

Voltage - Supply :

1.7V~1.9V

Memory Format :

DRAM

Factory Lead Time :

8 Weeks

Memory Width :

8

Output Characteristics :

3-STATE

Supply Current-Max :

0.27mA

Number of Ports :

1

Supply Voltage :

1.8V

Width :

8mm

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Sequential Burst Length :

48

Memory Interface :

Parallel

Power Supplies :

1.8V

Packaging :

Tray

Length :

10.5mm

Package / Case :

60-TFBGA

Interleaved Burst Length :

48

Write Cycle Time - Word, Page :

15ns

Additional Feature :

AUTO/SELF REFRESH

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Functions :

1

Operating Temperature :

0°C~85°C TC

Organization :

128MX8

Time@Peak Reflow Temperature-Max (s) :

10

Refresh Cycles :

8192

Memory Density :

1073741824 bit

Mounting Type :

Surface Mount

Terminal Pitch :

0.8mm

Surface Mount :

yes

Memory Type :

Volatile