IS43DR81280C-25DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

JESD-30 Code :

R-PBGA-B60

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Clock Frequency :

400MHz

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

1.9V

Refresh Cycles :

8192

Memory Density :

1073741824 bit

Supply Voltage :

1.8V

Organization :

128MX8

Number of Ports :

1

Number of Functions :

1

Write Cycle Time - Word, Page :

15ns

Supply Current-Max :

0.3mA

Memory Type :

Volatile

Qualification Status :

Not Qualified

Terminal Finish :

TIN SILVER COPPER

Interleaved Burst Length :

48

Power Supplies :

1.8V

JESD-609 Code :

e1

Packaging :

Tray

Memory Width :

8

I/O Type :

COMMON

Voltage - Supply :

1.7V~1.9V

Time@Peak Reflow Temperature-Max (s) :

10

Surface Mount :

yes

ECCN Code :

EAR99

Memory Size :

1Gb 128M x 8

Mounting Type :

Surface Mount

Sequential Burst Length :

48

Access Time :

400ps

Operating Temperature :

0°C~85°C TC

Width :

8mm

Terminal Pitch :

0.8mm

Additional Feature :

AUTO/SELF REFRESH

Height Seated (Max) :

1.2mm

Factory Lead Time :

8 Weeks

Operating Mode :

SYNCHRONOUS

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Memory Interface :

Parallel

Memory Format :

DRAM

Supply Voltage-Min (Vsup) :

1.7V

Output Characteristics :

3-STATE

Package / Case :

60-TFBGA

Number of Terminations :

60

Length :

10.5mm