IS43DR81280B-3DBI-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Temperature :

-40°C~85°C TA

Terminal Pitch :

0.8mm

Memory Type :

Volatile

Write Cycle Time - Word, Page :

15ns

Packaging :

Tape and Reel (TR)

Terminal Position :

BOTTOM

I/O Type :

COMMON

Power Supplies :

1.8V

Qualification Status :

Not Qualified

Memory Format :

DRAM

Memory Size :

1Gb 128M x 8

Refresh Cycles :

8192

Sequential Burst Length :

48

Access Time :

450ps

JESD-30 Code :

R-PBGA-B60

Clock Frequency :

333MHz

Output Characteristics :

3-STATE

Interleaved Burst Length :

48

Number of Terminations :

60

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Organization :

128MX8

RoHS Status :

ROHS3 Compliant

Package / Case :

60-TFBGA

Memory Width :

8

Voltage - Supply :

1.7V~1.9V

Mounting Type :

Surface Mount

Supply Current-Max :

0.27mA

Memory Density :

1073741824 bit

Memory Interface :

Parallel

Supply Voltage :

1.8V

Surface Mount :

yes