IS43DR81280A-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

RoHS Status :

RoHS Compliant

Supply Voltage-Max (Vsup) :

1.9V

Pbfree Code :

yes

Memory Type :

Volatile

ECCN Code :

EAR99

Package / Case :

60-TFBGA

Nominal Supply Current :

220mA

Data Bus Width :

8B

Peak Reflow Temperature (Cel) :

260

Packaging :

Tray

Supply Voltage :

1.8V

Time@Peak Reflow Temperature-Max (s) :

40

Height Seated (Max) :

1.2mm

Mount :

Surface Mount

Length :

13.65mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

-40°C~85°C TA

Write Cycle Time - Word, Page :

15ns

Mounting Type :

Surface Mount

Number of Pins :

60

Terminal Position :

BOTTOM

Memory Width :

8

JESD-609 Code :

e1

Organization :

128MX8

Voltage - Supply :

1.7V~1.9V

Number of Ports :

1

Additional Feature :

AUTO/SELF REFRESH

Memory Format :

DRAM

Access Time :

450ps

Density :

1 Gb

Address Bus Width :

17b

Memory Interface :

Parallel

Terminal Finish :

TIN SILVER COPPER

Number of Functions :

1

Terminal Pitch :

0.8mm

Output Characteristics :

3-STATE

Sequential Burst Length :

48

Memory Size :

1Gb 128M x 8

Operating Supply Voltage :

1.8V

I/O Type :

COMMON

HTS Code :

8542.32.00.32

Pin Count :

60

Number of Terminations :

60

Supply Voltage-Min (Vsup) :

1.7V

Interleaved Burst Length :

48

Radiation Hardening :

No

Clock Frequency :

333MHz

Refresh Cycles :

8192