IS43DR16640C-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Number of Terminations :

84

Memory Density :

1073741824 bit

Memory Type :

Volatile

I/O Type :

COMMON

Write Cycle Time - Word, Page :

15ns

Refresh Cycles :

8192

RoHS Status :

ROHS3 Compliant

Output Characteristics :

3-STATE

Memory Width :

16

Clock Frequency :

333MHz

Supply Current-Max :

0.27mA

Operating Temperature :

0°C~85°C TC

Operating Mode :

SYNCHRONOUS

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Functions :

1

Additional Feature :

AUTO/SELF REFRESH

Standby Current-Max :

0.025A

Supply Voltage-Min (Vsup) :

1.7V

Time@Peak Reflow Temperature-Max (s) :

10

Organization :

64MX16

Supply Voltage-Max (Vsup) :

1.9V

Surface Mount :

yes

Sequential Burst Length :

48

Peak Reflow Temperature (Cel) :

260

Voltage - Supply :

1.7V~1.9V

Packaging :

Tray

Terminal Pitch :

0.8mm

Width :

8mm

Memory Interface :

Parallel

Length :

12.5mm

Package / Case :

84-TFBGA

Number of Ports :

1

Memory Format :

DRAM

Memory Size :

1Gb 64M x 16

Qualification Status :

Not Qualified

Height Seated (Max) :

1.2mm

Supply Voltage :

1.8V

Access Time :

450ps

JESD-30 Code :

R-PBGA-B84

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Power Supplies :

1.8V

Interleaved Burst Length :

48