IS43DR16640C-25DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Contact Plating :

Copper, Silver, Tin

Interleaved Burst Length :

48

ECCN Code :

EAR99

Address Bus Width :

13b

Height Seated (Max) :

1.2mm

Memory Format :

DRAM

Supply Voltage :

1.8V

Terminal Finish :

TIN SILVER COPPER

Length :

12.5mm

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Supply Current-Max :

0.28mA

Number of Functions :

1

Sequential Burst Length :

48

Memory Size :

1Gb 64M x 16

Operating Mode :

SYNCHRONOUS

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

Operating Supply Voltage :

1.8V

Number of Pins :

84

I/O Type :

COMMON

Number of Ports :

1

Supply Voltage-Max (Vsup) :

1.9V

Max Frequency :

400MHz

Mounting Type :

Surface Mount

Density :

1 Gb

Memory Width :

16

Standby Current-Max :

0.025A

Data Bus Width :

16b

Package / Case :

84-TFBGA

Time@Peak Reflow Temperature-Max (s) :

10

Additional Feature :

AUTO/SELF REFRESH

Write Cycle Time - Word, Page :

15ns

Organization :

64MX16

Operating Temperature :

-40°C~85°C TA

Mount :

Surface Mount

Voltage - Supply :

1.7V~1.9V

Refresh Cycles :

8192

Terminal Pitch :

0.8mm

Memory Type :

Volatile

Qualification Status :

Not Qualified

Terminal Position :

BOTTOM

Access Time :

400ps

Output Characteristics :

3-STATE

Supply Voltage-Min (Vsup) :

1.7V

Number of Terminations :

84

RoHS Status :

ROHS3 Compliant

Packaging :

Tray