IS43DR16640B-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Nominal Supply Current :

220mA

Qualification Status :

Not Qualified

Operating Temperature :

0°C~70°C TA

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

1.9V

Density :

1 Gb

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Clock Frequency :

333MHz

Factory Lead Time :

8 Weeks

Number of Functions :

1

Terminal Pitch :

0.8mm

Length :

12.5mm

RoHS Status :

ROHS3 Compliant

Supply Voltage :

1.8V

ECCN Code :

EAR99

Write Cycle Time - Word, Page :

15ns

Number of Terminations :

84

Additional Feature :

AUTO/SELF REFRESH

Sequential Burst Length :

48

Supply Voltage-Min (Vsup) :

1.7V

Voltage - Supply :

1.7V~1.9V

Address Bus Width :

16b

Height Seated (Max) :

1.2mm

Data Bus Width :

16b

Access Time :

450ps

Organization :

64MX16

Memory Type :

Volatile

Terminal Position :

BOTTOM

Output Characteristics :

3-STATE

Interleaved Burst Length :

48

Standby Current-Max :

0.015A

Operating Mode :

SYNCHRONOUS

Memory Width :

16

Operating Supply Voltage :

1.8V

I/O Type :

COMMON

Number of Pins :

84

Packaging :

Tray

Refresh Cycles :

8192

Memory Format :

DRAM

Package / Case :

84-TFBGA

Mounting Type :

Surface Mount

Memory Size :

1Gb 64M x 16

Number of Ports :

1

HTS Code :

8542.32.00.32