IS43DR16640B-3DBI-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Output Characteristics :

3-STATE

Voltage - Supply :

1.7V~1.9V

Terminal Position :

BOTTOM

Access Time :

450ps

Memory Width :

16

Refresh Cycles :

8192

Sequential Burst Length :

48

RoHS Status :

Non-RoHS Compliant

Terminal Pitch :

0.8mm

Supply Voltage :

1.8V

Clock Frequency :

333MHz

Memory Size :

1Gb 64M x 16

Supply Current-Max :

0.25mA

Memory Format :

DRAM

Organization :

64MX16

Number of Terminations :

84

Write Cycle Time - Word, Page :

15ns

Operating Temperature :

-40°C~85°C TA

Package / Case :

84-TFBGA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Supplies :

1.8V

Packaging :

Tape and Reel (TR)

Number of Pins :

84

Memory Interface :

Parallel

Memory Type :

Volatile

Standby Current-Max :

0.015A

Mounting Type :

Surface Mount

Surface Mount :

yes

Memory Density :

1073741824 bit

I/O Type :

COMMON

Data Bus Width :

16b

Interleaved Burst Length :

48

Qualification Status :

Not Qualified