IS43DR16640B-3DBI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Refresh Cycles :

8192

Density :

1 Gb

ECCN Code :

EAR99

Number of Terminations :

84

Terminal Pitch :

0.8mm

Data Bus Width :

16b

Clock Frequency :

333MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Organization :

64MX16

Voltage - Supply :

1.7V~1.9V

Height Seated (Max) :

1.2mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Operating Supply Voltage :

1.8V

Number of Pins :

84

Length :

12.5mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Output Characteristics :

3-STATE

Surface Mount :

yes

Memory Width :

16

RoHS Status :

Non-RoHS Compliant

Supply Voltage-Min (Vsup) :

1.7V

Write Cycle Time - Word, Page :

15ns

Memory Type :

Volatile

Supply Current-Max :

0.25mA

HTS Code :

8542.32.00.32

Operating Temperature :

-40°C~85°C TA

Number of Functions :

1

Memory Size :

1Gb 64M x 16

Qualification Status :

Not Qualified

Access Time :

450ps

Packaging :

Tray

Memory Format :

DRAM

Standby Current-Max :

0.015A

Operating Mode :

SYNCHRONOUS

Interleaved Burst Length :

48

Package / Case :

84-TFBGA

Number of Ports :

1

Mounting Type :

Surface Mount

Supply Voltage :

1.8V

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage-Max (Vsup) :

1.9V

Memory Interface :

Parallel

I/O Type :

COMMON

Sequential Burst Length :

48