IS43DR16640B-25EBLI-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

15ns

Output Characteristics :

3-STATE

JESD-30 Code :

R-PBGA-B84

Supply Current-Max :

0.27mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Supplies :

1.8V

Supply Voltage :

1.8V

Memory Size :

1Gb 64M x 16

Sequential Burst Length :

48

Data Bus Width :

16b

Terminal Position :

BOTTOM

Package / Case :

84-TFBGA

Interleaved Burst Length :

48

Memory Format :

DRAM

Qualification Status :

Not Qualified

Memory Type :

Volatile

Surface Mount :

yes

Refresh Cycles :

8192

Standby Current-Max :

0.015A

Memory Density :

1073741824 bit

Memory Width :

16

Terminal Pitch :

0.8mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

84

Packaging :

Tape and Reel (TR)

Access Time :

450ps

I/O Type :

COMMON

Organization :

64MX16

Operating Temperature :

-40°C~85°C TA

Memory Interface :

Parallel

Max Frequency :

400MHz

Voltage - Supply :

1.7V~1.9V

Mounting Type :

Surface Mount