IS43DR16640B-25EBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Length :

12.5mm

Memory Size :

1Gb 64M x 16

Operating Supply Voltage :

1.8V

Refresh Cycles :

8192

Output Characteristics :

3-STATE

Number of Ports :

1

Memory Interface :

Parallel

Sequential Burst Length :

48

Supply Voltage-Min (Vsup) :

1.7V

Access Time :

450ps

Number of Functions :

1

Max Frequency :

400MHz

Supply Voltage :

1.8V

Mount :

Surface Mount

Data Bus Width :

16b

Memory Type :

Volatile

Operating Temperature :

-40°C~85°C TA

Density :

1 Gb

Mounting Type :

Surface Mount

Memory Width :

16

Package / Case :

84-TFBGA

Terminal Position :

BOTTOM

Operating Mode :

SYNCHRONOUS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Number of Pins :

84

Additional Feature :

AUTO/SELF REFRESH

Terminal Pitch :

0.8mm

Write Cycle Time - Word, Page :

15ns

I/O Type :

COMMON

Address Bus Width :

16b

Standby Current-Max :

0.015A

Number of Terminations :

84

Voltage - Supply :

1.7V~1.9V

Height Seated (Max) :

1.2mm

Qualification Status :

Not Qualified

Nominal Supply Current :

240mA

Packaging :

Tray

Supply Voltage-Max (Vsup) :

1.9V

Memory Format :

DRAM

RoHS Status :

ROHS3 Compliant

HTS Code :

8542.32.00.32

Organization :

64MX16

Interleaved Burst Length :

48