IS43DR16640B-25DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Packaging :

Tray

Ambient Temperature Range High :

85°C

Organization :

64MX16

Operating Temperature :

-40°C~85°C TA

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Output Characteristics :

3-STATE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

Length :

12.5mm

JESD-609 Code :

e1

Memory Size :

1Gb 64M x 16

Refresh Cycles :

8192

Supply Voltage-Min (Vsup) :

1.7V

REACH SVHC :

No SVHC

Sequential Burst Length :

48

Additional Feature :

AUTO/SELF REFRESH

Write Cycle Time - Word, Page :

15ns

Terminal Pitch :

0.8mm

Supply Voltage-Max (Vsup) :

1.9V

Supply Voltage :

1.8V

Mounting Type :

Surface Mount

Standby Current-Max :

0.015A

Memory Type :

Volatile

Mount :

Surface Mount

Clock Frequency :

400MHz

Terminal Position :

BOTTOM

Data Bus Width :

16b

I/O Type :

COMMON

Number of Ports :

1

Number of Terminations :

84

Address Bus Width :

16b

Voltage - Supply :

1.7V~1.9V

HTS Code :

8542.32.00.32

Number of Pins :

84

Nominal Supply Current :

240mA

Memory Interface :

Parallel

Operating Supply Voltage :

1.8V

Interleaved Burst Length :

48

Density :

1 Gb

Memory Width :

16

Factory Lead Time :

8 Weeks

Height :

1.2mm

Memory Format :

DRAM

Number of Functions :

1

Access Time :

400ps

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

84-TFBGA