IS43DR16640B-25DBI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Pitch :

0.8mm

Number of Terminations :

84

Access Time :

400ps

Height Seated (Max) :

1.2mm

Memory Size :

1Gb 64M x 16

HTS Code :

8542.32.00.32

Voltage - Supply :

1.7V~1.9V

Memory Interface :

Parallel

Output Characteristics :

3-STATE

Refresh Cycles :

8192

Qualification Status :

Not Qualified

Supply Current-Max :

0.27mA

Width :

8mm

I/O Type :

COMMON

Supply Voltage-Max (Vsup) :

1.9V

Clock Frequency :

400MHz

Power Supplies :

1.8V

Number of Ports :

1

ECCN Code :

EAR99

Number of Functions :

1

Organization :

64MX16

Memory Type :

Volatile

Sequential Burst Length :

48

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Density :

1073741824 bit

Supply Voltage-Min (Vsup) :

1.7V

Operating Mode :

SYNCHRONOUS

RoHS Status :

Non-RoHS Compliant

Memory Format :

DRAM

Supply Voltage :

1.8V

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Write Cycle Time - Word, Page :

15ns

Surface Mount :

yes

Memory Width :

16

Length :

12.5mm

Package / Case :

84-TFBGA

JESD-30 Code :

R-PBGA-B84

Interleaved Burst Length :

48

Additional Feature :

AUTO/SELF REFRESH

Operating Temperature :

-40°C~85°C TA

Standby Current-Max :

0.015A

Reach Compliance Code :

Compliant

Packaging :

Tray