IS43DR16640A-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Nominal Supply Current :

260mA

Clock Frequency :

333MHz

Memory Size :

1Gb 64M x 16

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Number of Functions :

1

Supply Voltage-Max (Vsup) :

1.9V

REACH SVHC :

No SVHC

HTS Code :

8542.32.00.32

Height Seated (Max) :

1.2mm

Packaging :

Tray

ECCN Code :

EAR99

Number of Terminations :

84

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Write Cycle Time - Word, Page :

15ns

Access Time :

450ps

Memory Format :

DRAM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

84-TFBGA

Operating Supply Voltage :

1.8V

Data Bus Width :

16b

Output Characteristics :

3-STATE

Length :

13.65mm

Address Bus Width :

16b

I/O Type :

COMMON

Pbfree Code :

yes

Supply Voltage :

1.8V

Page Size :

1GB

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Number of Ports :

1

Terminal Pitch :

0.8mm

Organization :

64MX16

JESD-609 Code :

e1

Terminal Position :

BOTTOM

Memory Interface :

Parallel

Supply Voltage-Min (Vsup) :

1.7V

Sequential Burst Length :

48

Voltage - Supply :

1.7V~1.9V

Memory Width :

16

Standby Current-Max :

0.015A

Peak Reflow Temperature (Cel) :

260

Pin Count :

84

Refresh Cycles :

8192

Operating Temperature :

0°C~70°C TA

Density :

1 Gb

Number of Pins :

84

Additional Feature :

AUTO/SELF REFRESH

Memory Type :

Volatile

Radiation Hardening :

No

Interleaved Burst Length :

48