IS43DR16320D-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

ECCN Code :

EAR99

Standby Current-Max :

0.025A

Factory Lead Time :

8 Weeks

Number of Functions :

1

Voltage - Supply :

1.7V~1.9V

Number of Terminations :

84

Package / Case :

84-TFBGA

Number of Ports :

1

JESD-609 Code :

e1

Write Cycle Time - Word, Page :

15ns

Clock Frequency :

333MHz

Width :

8mm

Supply Current-Max :

0.23mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

SYNCHRONOUS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

PROGRAMMABLE CAS LATENCY

Terminal Finish :

TIN SILVER COPPER

Qualification Status :

Not Qualified

Interleaved Burst Length :

48

Surface Mount :

yes

Memory Type :

Volatile

Operating Temperature :

0°C~70°C TA

Memory Format :

DRAM

Height Seated (Max) :

1.2mm

RoHS Status :

ROHS3 Compliant

I/O Type :

COMMON

Memory Size :

512Mb 32M x 16

Packaging :

Tray

Output Characteristics :

3-STATE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Interface :

Parallel

HTS Code :

8542.32.00.28

Terminal Position :

BOTTOM

JESD-30 Code :

R-PBGA-B84

Access Time :

450ps

Supply Voltage :

1.8V

Organization :

32MX16

Terminal Pitch :

0.8mm

Mounting Type :

Surface Mount

Refresh Cycles :

8192

Length :

12.5mm

Supply Voltage-Max (Vsup) :

1.9V

Memory Width :

16

Supply Voltage-Min (Vsup) :

1.7V

Memory Density :

536870912 bit

Sequential Burst Length :

48

Power Supplies :

1.8V