IS43DR16320D-25DBI
- Mfr.Part #
- IS43DR16320D-25DBI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84TWBGA
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Terminal Position :
- BOTTOM
- Operating Supply Voltage :
- 1.8V
- Package / Case :
- 84-TFBGA
- Voltage - Supply :
- 1.7V~1.9V
- Terminal Pitch :
- 0.8mm
- Supply Voltage-Max (Vsup) :
- 1.9V
- Interleaved Burst Length :
- 48
- Supply Voltage :
- 1.8V
- I/O Type :
- COMMON
- Memory Format :
- DRAM
- Supply Current-Max :
- 0.25mA
- Organization :
- 32MX16
- Operating Mode :
- SYNCHRONOUS
- Number of Ports :
- 1
- Number of Terminations :
- 84
- Standby Current-Max :
- 0.025A
- Address Bus Width :
- 13b
- Height Seated (Max) :
- 1.2mm
- Number of Pins :
- 84
- Density :
- 512 Mb
- Output Characteristics :
- 3-STATE
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Type :
- Volatile
- Memory Interface :
- Parallel
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Functions :
- 1
- Length :
- 12.5mm
- Sequential Burst Length :
- 48
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- PROGRAMMABLE CAS LATENCY
- Clock Frequency :
- 400MHz
- Operating Temperature :
- -40°C~85°C TA
- Qualification Status :
- Not Qualified
- Memory Width :
- 16
- Surface Mount :
- yes
- Packaging :
- Tray
- Write Cycle Time - Word, Page :
- 15ns
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Access Time :
- 400ps
- HTS Code :
- 8542.32.00.28
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supply Voltage-Min (Vsup) :
- 1.7V
- Mounting Type :
- Surface Mount
- Memory Size :
- 512Mb 32M x 16
- Refresh Cycles :
- 8192
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- IS43DR16320D-25DBI
Memory Integrated Silicon Solution, Inc. IS43DR16320D-25DBI Overview
The IS43DR16320D-25DBI, manufactured by Integrated Silicon Solution, Inc. (ISSI), represents a robust and advanced solution in the realm of digital memory technology. This DRAM IC features a substantial 512Mbit capacity, tailored for applications demanding high-volume, high-speed data processing and storage. Packaged in a compact 84TWBGA format, it offers optimal integration for system developers looking to enhance the performance and reliability of their memory architectures. Emphasizing the Memory Integrated Silicon Solution, Inc. IS43DR16320D-25DBI’s adoption can significantly boost the efficiency and scalability of systems, making it an invaluable asset for B2B customers seeking to upgrade their digital infrastructure.
IS43DR16320D-25DBI Features
The IS43DR16320D-25DBI DRAM IC is equipped with a parallel interface, facilitating swift and seamless data handling capabilities essential for modern computing environments. Its 512Mbit density is crucial for high-density storage solutions, while the 84TWBGA package assures minimal footprint and enhanced thermal management, critical for maintaining system stability under varying operational conditions.
IS43DR16320D-25DBI Applications
- Advanced Computing Systems: Employed in server and high-performance computing scenarios to handle large datasets and complex algorithms efficiently.
- Consumer Electronics: Integral to enhancing the user experience in devices such as high-end televisions and gaming consoles through improved data flow and storage capacity.
- Automotive Electronics: Utilized in automotive systems for managing navigation, infotainment, and driver assistance systems, ensuring quick data access and reliability.
- Telecommunications Infrastructure: Critical in telecommunications equipment to support fast data transmission and real-time communication services.
- Industrial Automation: Supports automation systems by providing the memory capacity needed for real-time process control and complex machine operations.
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