IS43DR16160B-25DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Data Bus Width :

16b

Additional Feature :

AUTO/SELF REFRESH

Operating Mode :

SYNCHRONOUS

Organization :

16MX16

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Clock Frequency :

400MHz

Memory Format :

DRAM

ECCN Code :

EAR99

JESD-609 Code :

e1

Write Cycle Time - Word, Page :

15ns

HTS Code :

8542.32.00.24

Factory Lead Time :

8 Weeks

Interleaved Burst Length :

48

Length :

12.5mm

Memory Interface :

Parallel

Surface Mount :

yes

Memory Type :

Volatile

Supply Voltage-Max (Vsup) :

1.9V

Memory Size :

256Mb 16M x 16

Supply Current-Max :

0.33mA

Package / Case :

84-TFBGA

Power Supplies :

1.8V

Packaging :

Tray

Supply Voltage-Min (Vsup) :

1.7V

Number of Ports :

1

Operating Temperature :

0°C~70°C TA

Number of Terminations :

84

Peak Reflow Temperature (Cel) :

260

Access Time :

400ps

Voltage - Supply :

1.7V~1.9V

Memory Width :

16

I/O Type :

COMMON

Number of Pins :

84

Terminal Finish :

TIN SILVER COPPER

Qualification Status :

Not Qualified

Sequential Burst Length :

48

Mounting Type :

Surface Mount

Terminal Pitch :

0.8mm

Supply Voltage :

1.8V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Height Seated (Max) :

1.2mm

Standby Current-Max :

0.025A

Output Characteristics :

3-STATE

Refresh Cycles :

8192

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

10