IS43DR16160A-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Temperature :

-40°C~85°C TA

Memory Size :

256Mb 16M x 16

Supply Voltage-Min (Vsup) :

1.7V

Density :

256 Mb

Pin Count :

84

Standby Current-Max :

0.005A

Mount :

Surface Mount

Operating Supply Voltage :

1.8V

Length :

12.5mm

Terminal Pitch :

0.8mm

Memory Width :

16

Memory Interface :

Parallel

Number of Pins :

84

Memory Type :

Volatile

Organization :

16MX16

Radiation Hardening :

No

Address Bus Width :

15b

Number of Functions :

1

Access Time :

450ps

ECCN Code :

EAR99

Number of Terminations :

84

Additional Feature :

AUTO/SELF REFRESH

Refresh Cycles :

8192

Terminal Finish :

TIN SILVER COPPER

Number of Ports :

1

Voltage - Supply :

1.7V~1.9V

I/O Type :

COMMON

Terminal Position :

BOTTOM

HTS Code :

8542.32.00.24

JESD-609 Code :

e1

Pbfree Code :

yes

Mounting Type :

Surface Mount

Data Bus Width :

16b

Peak Reflow Temperature (Cel) :

260

Memory Format :

DRAM

Clock Frequency :

333MHz

Max Supply Current :

135mA

Write Cycle Time - Word, Page :

15ns

Nominal Supply Current :

330mA

Packaging :

Tray

Supply Voltage :

1.8V

Interleaved Burst Length :

48

Height Seated (Max) :

1.2mm

Package / Case :

84-TFBGA

Output Characteristics :

3-STATE

Supply Voltage-Max (Vsup) :

1.9V

RoHS Status :

RoHS Compliant

Sequential Burst Length :

48

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

40