IS43DR16160A-25EBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Supply Voltage-Min (Vsup) :

1.7V

Voltage - Supply :

1.7V~1.9V

Supply Voltage-Max (Vsup) :

1.9V

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Pins :

84

Organization :

16MX16

Refresh Cycles :

8192

Clock Frequency :

400MHz

Mount :

Surface Mount

I/O Type :

COMMON

Data Bus Width :

16b

JESD-609 Code :

e1

Supply Voltage :

1.8V

Packaging :

Tray

Operating Supply Voltage :

1.8V

Memory Type :

Volatile

Write Cycle Time - Word, Page :

15ns

Height Seated (Max) :

1.2mm

Standby Current-Max :

0.005A

Density :

256 Mb

Terminal Pitch :

0.8mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

40

Address Bus Width :

15b

Number of Functions :

1

Package / Case :

84-TFBGA

Memory Width :

16

Mounting Type :

Surface Mount

Pin Count :

84

Number of Ports :

1

Nominal Supply Current :

385mA

RoHS Status :

RoHS Compliant

Memory Size :

256Mb 16M x 16

Memory Format :

DRAM

Memory Interface :

Parallel

Terminal Position :

BOTTOM

Access Time :

400ns

Number of Terminations :

84

Sequential Burst Length :

48

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~85°C TA

Output Characteristics :

3-STATE

Peak Reflow Temperature (Cel) :

260

Interleaved Burst Length :

48

Length :

12.5mm

Radiation Hardening :

No

Additional Feature :

AUTO/SELF REFRESH

HTS Code :

8542.32.00.24