IS42S86400B-7TLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Height Seated (Max) :

1.2mm

Density :

512 Mb

Clock Frequency :

143MHz

Memory Format :

DRAM

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Mounting Type :

Surface Mount

Length :

22.22mm

Access Time :

5.4ns

Address Bus Width :

15b

JESD-609 Code :

e3

Terminal Position :

Dual

Memory Width :

8

Memory Size :

512Mb 64M x 8

Refresh Cycles :

8192

Number of Terminations :

54

ECCN Code :

EAR99

Memory Interface :

Parallel

Interleaved Burst Length :

1248

Nominal Supply Current :

150mA

Pin Count :

54

Number of Functions :

1

Standby Current-Max :

0.004A

Packaging :

Tray

Supply Voltage :

3.3V

Data Bus Width :

8B

Supply Voltage-Max (Vsup) :

3.6V

Voltage - Supply :

3V~3.6V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Output Characteristics :

3-STATE

Number of Pins :

54

Number of Ports :

1

I/O Type :

COMMON

Time@Peak Reflow Temperature-Max (s) :

10

Sequential Burst Length :

1248FP

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Temperature :

-40°C~85°C TA

Terminal Pitch :

0.8mm

Pbfree Code :

yes

Organization :

64MX8

Additional Feature :

AUTO/SELF REFRESH

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Supply Voltage-Min (Vsup) :

3V

Operating Supply Voltage :

3.3V

Memory Type :

Volatile