IS42S81600E-7TLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Width :

8

Terminal Position :

Dual

Number of Pins :

54

Radiation Hardening :

No

Output Characteristics :

3-STATE

Refresh Cycles :

4096

Max Supply Current :

130mA

I/O Type :

COMMON

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Pin Count :

54

Number of Functions :

1

Operating Supply Voltage :

3.3V

Density :

128 Mb

Memory Size :

128Mb 16M x 8

Standby Current-Max :

0.002A

Clock Frequency :

143MHz

Address Bus Width :

14b

Sequential Burst Length :

1248FP

Supply Voltage :

3.3V

Mounting Type :

Surface Mount

Length :

22.22mm

Access Time :

5.4ns

Terminal Pitch :

0.8mm

Mount :

Surface Mount

JESD-609 Code :

e3

Memory Format :

DRAM

Organization :

16MX8

Data Bus Width :

8B

Memory Type :

Volatile

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

260

Number of Ports :

1

Supply Voltage-Min (Vsup) :

3V

Interleaved Burst Length :

1248

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Supply Voltage-Max (Vsup) :

3.6V

Voltage - Supply :

3V~3.6V

Additional Feature :

AUTO/SELF REFRESH

Number of Terminations :

54

Nominal Supply Current :

130mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

Pbfree Code :

yes

Height Seated (Max) :

1.2mm

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

-40°C~85°C TA

Packaging :

Tray