IS42S81600E-7TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Pin Count :

54

Data Bus Width :

8B

Number of Terminations :

54

Height Seated (Max) :

1.2mm

Memory Width :

8

Organization :

16MX8

Terminal Position :

Dual

Max Supply Current :

130mA

Number of Functions :

1

Interleaved Burst Length :

1248

Supply Voltage-Min (Vsup) :

3V

Nominal Supply Current :

130mA

Access Time :

5.4ns

Mount :

Surface Mount

Memory Interface :

Parallel

Output Characteristics :

3-STATE

Additional Feature :

AUTO/SELF REFRESH

Packaging :

Tray

Package / Case :

54-TSOP (0.400, 10.16mm Width)

I/O Type :

COMMON

Terminal Pitch :

0.8mm

Radiation Hardening :

No

Density :

128 Mb

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

RoHS Compliant

Memory Size :

128Mb 16M x 8

ECCN Code :

EAR99

Supply Voltage-Max (Vsup) :

3.6V

Terminal Finish :

Matte Tin (Sn) - annealed

Standby Current-Max :

0.002A

Length :

22.22mm

Clock Frequency :

143MHz

Memory Type :

Volatile

Address Bus Width :

14b

Voltage - Supply :

3V~3.6V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Memory Format :

DRAM

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

3.3V

Sequential Burst Length :

1248FP

Number of Ports :

1

Supply Voltage :

3.3V

Operating Temperature :

-40°C~85°C TA

Number of Pins :

54

Time@Peak Reflow Temperature-Max (s) :

10

Refresh Cycles :

4096

Pbfree Code :

yes