IS42S81600E-6TLI
- Mfr.Part #
- IS42S81600E-6TLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PAR 54TSOP II
- Stock
- 24,111
- In Stock :
- 24,111
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Memory Type :
- Volatile
- Number of Ports :
- 1
- Terminal Pitch :
- 0.8mm
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Supply Voltage :
- 3.3V
- Supply Voltage-Min (Vsup) :
- 3V
- Operating Supply Voltage :
- 3.3V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Interleaved Burst Length :
- 1248
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Sequential Burst Length :
- 1248FP
- Pbfree Code :
- yes
- I/O Type :
- COMMON
- Height Seated (Max) :
- 1.2mm
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Access Time :
- 5.4ns
- RoHS Status :
- RoHS Compliant
- Voltage - Supply :
- 3V~3.6V
- Output Characteristics :
- 3-STATE
- Additional Feature :
- AUTO/SELF REFRESH
- Operating Temperature :
- -40°C~85°C TA
- Number of Terminations :
- 54
- Packaging :
- Tray
- Number of Pins :
- 54
- Pin Count :
- 54
- Organization :
- 16MX8
- Address Bus Width :
- 14b
- Nominal Supply Current :
- 150mA
- Clock Frequency :
- 166MHz
- Supply Voltage-Max (Vsup) :
- 3.6V
- Memory Interface :
- Parallel
- Memory Format :
- DRAM
- Number of Functions :
- 1
- Terminal Position :
- Dual
- Operating Mode :
- SYNCHRONOUS
- Density :
- 128 Mb
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Memory Size :
- 128Mb 16M x 8
- Refresh Cycles :
- 4096
- Length :
- 22.22mm
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Memory Width :
- 8
- Data Bus Width :
- 8B
- Standby Current-Max :
- 0.002A
- Datasheets
- IS42S81600E-6TLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S81600E-6TLI Overview
The IS42S81600E-6TLI, manufactured by Integrated Silicon Solution, Inc. (ISSI), is a high-performance 128Mbit DRAM chip designed for a wide range of applications requiring large-volume, high-speed memory storage. This component utilizes a parallel interface in a 54-pin TSOP II package, offering robust speed and reliability for sophisticated electronics. The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S81600E-6TLI is engineered to meet the rigorous demands of modern technology, ensuring both efficiency and durability. Its large memory capacity and fast data transfer rates make it ideal for applications that require quick access to large amounts of data, enhancing the overall performance of electronic systems.
IS42S81600E-6TLI Features
The IS42S81600E-6TLI DRAM chip boasts several key features that make it a standout choice for integrating into advanced electronic systems. It supports a data rate of 166 MHz, which ensures rapid access and processing capabilities. The device's low operating voltage minimizes power consumption, while its 54-pin configuration allows for a compact footprint, making it suitable for space-constrained applications. Additionally, its robust error management capabilities ensure reliable operation even under demanding conditions.
IS42S81600E-6TLI Applications
- Consumer Electronics: Utilized in devices like digital cameras and gaming consoles where high memory bandwidth and capacity are crucial for performance.
- Telecommunications: Employed in routers and switches, providing the necessary data buffering that enhances device throughput and reliability in communication networks.
- Automotive Systems: Integrated into infotainment and navigation systems to handle complex processing and storage requirements essential for modern vehicles.
- Industrial Automation: Supports automation systems and machinery controls, where rapid data access and processing are needed for efficient operation.
- Computing: Ideal for use in servers and high-performance computing systems where extensive data processing and storage capabilities are necessary.
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