IS42S32800D-75ETL
- Mfr.Part #
- IS42S32800D-75ETL
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 86-TFSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PAR 86TSOP II
- Stock
- 44,300
- In Stock :
- 44,300
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Supply Voltage :
- 3.3V
- Memory Size :
- 256Mb 8M x 32
- Additional Feature :
- AUTO/SELF REFRESH
- Terminal Position :
- Dual
- Packaging :
- Tray
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Memory Width :
- 32
- Height Seated (Max) :
- 1.2mm
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 0°C~70°C TA
- Number of Functions :
- 1
- Number of Ports :
- 1
- Operating Mode :
- SYNCHRONOUS
- Peak Reflow Temperature (Cel) :
- 260
- I/O Type :
- COMMON
- Supply Voltage-Max (Vsup) :
- 3.6V
- Pbfree Code :
- yes
- Supply Voltage-Min (Vsup) :
- 3V
- Number of Pins :
- 86
- Voltage - Supply :
- 3V~3.6V
- Memory Interface :
- Parallel
- Mount :
- Surface Mount
- Nominal Supply Current :
- 180mA
- Access Time :
- 5.5ns
- Pin Count :
- 86
- Sequential Burst Length :
- 1248FP
- Operating Supply Voltage :
- 3.3V
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- HTS Code :
- 8542.32.00.24
- Density :
- 256 Mb
- Data Bus Width :
- 32b
- Memory Type :
- Volatile
- Interleaved Burst Length :
- 1248
- Refresh Cycles :
- 4096
- Organization :
- 8MX32
- Clock Frequency :
- 133MHz
- Terminal Pitch :
- 0.5mm
- Address Bus Width :
- 13b
- Number of Terminations :
- 86
- Standby Current-Max :
- 0.003A
- ECCN Code :
- EAR99
- Package / Case :
- 86-TFSOP (0.400, 10.16mm Width)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- RoHS Status :
- RoHS Compliant
- Length :
- 22.22mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Format :
- DRAM
- Datasheets
- IS42S32800D-75ETL
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32800D-75ETL Overview
The IS42S32800D-75ETL by Integrated Silicon Solution, Inc. (ISSI) is a high-performance IC DRAM that boasts a significant storage capacity of 256 Mbit, encapsulated in an efficient 86TSOP II package. Designed to meet the rigorous demands of advanced computing and high-speed processing, this memory module is ideal for businesses seeking robust and reliable memory solutions. The compact form factor of the TSOP II package ensures minimal space usage while providing stable performance, making it a preferred choice for system designers aiming to optimize board layout without compromising on capacity or performance. Incorporating this Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32800D-75ETL into your products guarantees enhanced functionality with increased reliability and speed.
IS42S32800D-75ETL Features
This DRAM module is characterized by its parallel interface and large 256 Mbit storage capacity, allowing for efficient handling of large volumes of data at high speeds. It operates at 3.3V, which provides a balance between power consumption and performance efficiency. The IS42S32800D-75ETL also features fast clock speeds and a standardized 86TSOP II form factor, making it both a versatile and essential component for high-demand applications where durability and dependability are critical.
IS42S32800D-75ETL Applications
- Consumer Electronics: Utilized in devices such as high-definition televisions and gaming consoles where large, fast memory is essential for user experience.
- Telecommunications: Supports the processing needs of telecommunications equipment, such as switches and routers, ensuring efficient data transfer and reliability in communication.
- Automotive Systems: Employed in advanced driver-assistance systems (ADAS) to process and store large amounts of data in real-time, contributing to vehicle safety and performance enhancements.
- Industrial Automation: Crucial for control systems in manufacturing environments where precision and speed are necessary to maintain high levels of productivity and operational continuity.
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