IS42S32400E-6BLI
- Mfr.Part #
- IS42S32400E-6BLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 90-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 90TFBGA
- Stock
- 46,681
- In Stock :
- 46,681
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Number of Functions :
- 1
- Memory Interface :
- Parallel
- Supply Voltage-Min (Vsup) :
- 3V
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Supply Voltage :
- 3.3V
- Nominal Supply Current :
- 180mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Sequential Burst Length :
- 1248FP
- Access Time :
- 5.4ns
- Refresh Cycles :
- 4096
- HTS Code :
- 8542.32.00.02
- Packaging :
- Tray
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Density :
- 128 Mb
- Memory Type :
- Volatile
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- AUTO/SELF REFRESH
- Mounting Type :
- Surface Mount
- Terminal Pitch :
- 0.8mm
- ECCN Code :
- EAR99
- I/O Type :
- COMMON
- Clock Frequency :
- 166MHz
- Standby Current-Max :
- 0.001A
- Package / Case :
- 90-TFBGA
- Address Bus Width :
- 14b
- Length :
- 13mm
- Peak Reflow Temperature (Cel) :
- 260
- Number of Ports :
- 1
- Interleaved Burst Length :
- 1248
- Number of Pins :
- 90
- Organization :
- 4MX32
- Voltage - Supply :
- 3V~3.6V
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- BOTTOM
- Height Seated (Max) :
- 1.2mm
- Pin Count :
- 90
- Operating Temperature :
- -40°C~85°C TA
- Number of Terminations :
- 90
- Output Characteristics :
- 3-STATE
- Memory Format :
- DRAM
- Operating Supply Voltage :
- 3.3V
- Supply Voltage-Max (Vsup) :
- 3.6V
- Memory Width :
- 32
- Memory Size :
- 128Mb 4M x 32
- JESD-609 Code :
- e1
- Data Bus Width :
- 32b
- Datasheets
- IS42S32400E-6BLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32400E-6BLI Overview
Introducing the IS42S32400E-6BLI from Integrated Silicon Solution, Inc. (ISSI), a high-performance 128Mbit DRAM chip designed for applications demanding substantial memory capacity and high-speed data processing. This Memory Integrated Silicon Solution, Inc. (ISSI) product utilizes a parallel interface, ensuring effective communication and rapid data transfer rates, housed within a compact 90TFBGA package. The chip's robust design and technical precision make it an ideal solution for manufacturers seeking reliable and efficient memory components to enhance their high-volume product lines.
IS42S32400E-6BLI Features
The IS42S32400E-6BLI DRAM features a 128 Mbit storage capacity, providing ample space for temporary data storage essential for system speed and efficiency. Its parallel interface architecture allows for quick access and processing, critical in high-performance computing environments. The compact 90TFBGA package is designed for streamlined integration into various electronic assemblies, ensuring flexibility across multiple applications while maintaining a small footprint.
IS42S32400E-6BLI Applications
- Consumer Electronics: Ideal for use in devices such as digital cameras and gaming consoles where quick data retrieval and processing are crucial for user experience.
- Telecommunications: Applies to networking hardware such as switches and routers, enhancing buffer memory capacities for improved data flow and system reliability.
- Automotive Systems: Used in automotive infotainment systems, providing the necessary memory capacity for multimedia data storage and real-time processing.
- Industrial Automation: Serves robust industrial control systems requiring stable and quick access memory to handle complex operations and enhance system responsiveness.
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