IS42S32400B-6TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Supply Voltage :

3.3V

Refresh Cycles :

4096

Supply Voltage-Max (Vsup) :

3.6V

RoHS Status :

RoHS Compliant

Memory Interface :

Parallel

Number of Functions :

1

Terminal Position :

Dual

Interleaved Burst Length :

1248

I/O Type :

COMMON

Memory Size :

128Mb 4M x 32

JESD-609 Code :

e3

Supply Voltage-Min (Vsup) :

3V

Address Bus Width :

14b

Moisture Sensitivity Level (MSL) :

2 (1 Year)

ECCN Code :

EAR99

Nominal Supply Current :

180mA

Organization :

4MX32

Memory Format :

DRAM

Number of Pins :

86

Mounting Type :

Surface Mount

Radiation Hardening :

No

Height Seated (Max) :

1.2mm

HTS Code :

8542.32.00.02

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Sequential Burst Length :

1248FP

Density :

128 Mb

Length :

22.22mm

Operating Supply Voltage :

3.3V

Memory Type :

Volatile

Clock Frequency :

166MHz

Additional Feature :

AUTO/SELF REFRESH

Output Characteristics :

3-STATE

Access Time :

5.4ns

Number of Ports :

1

Terminal Finish :

Matte Tin (Sn) - annealed

Memory Width :

32

Pin Count :

86

Standby Current-Max :

0.001A

Voltage - Supply :

3V~3.6V

Number of Terminations :

86

Packaging :

Tray

Terminal Pitch :

0.5mm

Time@Peak Reflow Temperature-Max (s) :

40

Data Bus Width :

32b

Package / Case :

86-TFSOP (0.400, 10.16mm Width)

Operating Temperature :

0°C~70°C TA