IS42S32200C1-7B
- Mfr.Part #
- IS42S32200C1-7B
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 90-LFBGA
- Datasheet
- Download
- Description
- IC DRAM 64MBIT PARALLEL 90BGA
- Stock
- 30,428
- In Stock :
- 30,428
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Standby Current-Max :
- 0.002A
- I/O Type :
- COMMON
- Access Time :
- 5.5ns
- Packaging :
- Tray
- Clock Frequency :
- 143MHz
- Operating Temperature :
- 0°C~70°C TA
- Height Seated (Max) :
- 1.2mm
- Memory Format :
- DRAM
- Mounting Type :
- Surface Mount
- Voltage - Supply :
- 3.15V~3.45V
- Data Bus Width :
- 32b
- Number of Functions :
- 1
- Memory Width :
- 32
- Number of Pins :
- 90
- Length :
- 13mm
- Supply Current-Max :
- 0.18mA
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Memory Size :
- 64Mb 2M x 32
- Qualification Status :
- Not Qualified
- Interleaved Burst Length :
- 1248
- Sequential Burst Length :
- 1248FP
- Refresh Cycles :
- 4096
- Operating Mode :
- SYNCHRONOUS
- Reach Compliance Code :
- not_compliant
- Package / Case :
- 90-LFBGA
- Supply Voltage :
- 3.3V
- Power Supplies :
- 3.3V
- Supply Voltage-Min (Vsup) :
- 3V
- HTS Code :
- 8542.32.00.02
- Terminal Position :
- BOTTOM
- Memory Interface :
- Parallel
- Number of Ports :
- 1
- Output Characteristics :
- 3-STATE
- Memory Density :
- 67108864 bit
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Pin Count :
- 90
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Pitch :
- 0.8mm
- JESD-609 Code :
- e0
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Type :
- Volatile
- Supply Voltage-Max (Vsup) :
- 3.6V
- Organization :
- 2MX32
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 90
- Datasheets
- IS42S32200C1-7B
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32200C1-7B Overview
The IS42S32200C1-7B from Integrated Silicon Solution, Inc. (ISSI) is a high-performance DRAM (Dynamic Random-Access Memory) IC, ideal for applications demanding substantial memory storage capabilities. This 64Mbit DRAM leverages a parallel interface and is encapsulated in a compact 90-ball BGA (Ball Grid Array) package, making it both space-efficient and reliable for sophisticated electronic systems. With its robust design and high-speed data retention capabilities, the Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32200C1-7B stands out in the market, providing exceptional performance and scalability critical for modern electronic devices.
IS42S32200C1-7B Features
The IS42S32200C1-7B DRAM chip boasts several key features that enhance its utility in various computing and high-memory environments. Key attributes include a 64Mbit capacity, high data integrity, and low-power consumption. Its compact 90BGA packaging ensures that it can be integrated into systems with limited space while maintaining optimal thermal performance. Additionally, its parallel interface facilitates faster data transfer rates, which is essential for applications requiring high-speed memory access.
IS42S32200C1-7B Applications
- Consumer Electronics: Used in devices like televisions and gaming consoles to manage fast, temporary data storage for improved device performance and responsiveness.
- Communication Equipment: Implements in routers and switches to buffer data packets, enhancing the efficiency and speed of data transmission across networks.
- Automotive Electronics: Provides memory solutions for advanced driver-assistance systems (ADAS) where rapid data processing is critical for real-time decision-making.
- Industrial Automation: Supports complex machinery in automating tasks, storing temporary operational data necessary for machine learning algorithms and process optimizations.
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