IS42S32160B-75ETLI
- Mfr.Part #
- IS42S32160B-75ETLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 86-TFSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PAR 86TSOP II
- Stock
- 1,826
- In Stock :
- 1,826
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Pin Count :
- 86
- Additional Feature :
- AUTO/SELF REFRESH
- Operating Temperature :
- -40°C~85°C TA
- Supply Voltage-Min (Vsup) :
- 3V
- Number of Functions :
- 1
- Output Characteristics :
- 3-STATE
- Access Time :
- 5.5ns
- Number of Pins :
- 86
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 86
- Packaging :
- Tray
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8542.32.00.28
- Mount :
- Surface Mount
- Standby Current-Max :
- 0.004A
- Number of Ports :
- 1
- Length :
- 22.22mm
- Supply Voltage :
- 3.3V
- I/O Type :
- COMMON
- Operating Supply Voltage :
- 3.3V
- Nominal Supply Current :
- 180mA
- Refresh Cycles :
- 8192
- Memory Type :
- Volatile
- Terminal Pitch :
- 0.5mm
- Memory Interface :
- Parallel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- 86-TFSOP (0.400, 10.16mm Width)
- Terminal Position :
- Dual
- Interleaved Burst Length :
- 1248
- Memory Size :
- 512Mb 16M x 32
- Density :
- 512 Mb
- Organization :
- 16MX32
- Memory Width :
- 32
- Supply Voltage-Max (Vsup) :
- 3.6V
- Memory Format :
- DRAM
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- Data Bus Width :
- 32b
- Voltage - Supply :
- 3V~3.6V
- Sequential Burst Length :
- 1248FP
- Clock Frequency :
- 133MHz
- Address Bus Width :
- 15b
- Pbfree Code :
- yes
- Height Seated (Max) :
- 1.2mm
- ECCN Code :
- EAR99
- Datasheets
- IS42S32160B-75ETLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32160B-75ETLI Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32160B-75ETLI DRAM IC is a high-capacity, performance-driven memory component designed to meet the rigorous demands of advanced computing systems. This 512Mbit DRAM uses a parallel interface and is packaged in a compact 86TSOP II form factor, offering optimal density and speed for high-performance applications. Its robust design ensures reliable operation under various temperature ranges, making it a versatile choice for manufacturers looking to enhance system capabilities with dependable and efficient memory solutions.
IS42S32160B-75ETLI Features
The IS42S32160B-75ETLI offers a combination of features that enhance its utility in complex electronic systems. Key features include its large 512Mbit capacity and the use of advanced 86TSOP II packaging technology that aids in efficient thermal management and space utilization. It operates with a parallel interface, providing faster data transfer rates which are crucial for high-speed computing tasks. Furthermore, its extended temperature range makes it suitable for use in environments with varying thermal conditions.
IS42S32160B-75ETLI Applications
- Automotive Systems: Utilized in car infotainment systems and advanced driver-assistance systems (ADAS) where reliable and high-capacity memory is essential for real-time processing and data storage.
- Telecommunications Equipment: Supports the demands of telecommunications infrastructure, such as switches and routers, by providing high-speed data buffering and storage capabilities.
- Industrial Automation: Plays a critical role in complex industrial automation systems, enabling sophisticated machine-to-machine communication and data logging functions.
- Consumer Electronics: Ideal for use in consumer electronics such as gaming consoles and high-definition televisions, where large-volume and high-speed memory is necessary for enhanced user experiences.
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