IS42S32160B-6BLI
- Mfr.Part #
- IS42S32160B-6BLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 90-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 90WBGA
- Stock
- 34,265
- In Stock :
- 34,265
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Memory Size :
- 512Mb 16M x 32
- Clock Frequency :
- 166MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Organization :
- 16MX32
- Number of Terminations :
- 90
- Density :
- 512 Mb
- Memory Type :
- Volatile
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 90
- Supply Voltage-Max (Vsup) :
- 3.6V
- Memory Format :
- DRAM
- Packaging :
- Tray
- Pbfree Code :
- yes
- Length :
- 13mm
- Voltage - Supply :
- 3V~3.6V
- Memory Interface :
- Parallel
- Number of Pins :
- 90
- ECCN Code :
- EAR99
- Terminal Pitch :
- 0.8mm
- Access Time :
- 5.4ns
- RoHS Status :
- RoHS Compliant
- Height Seated (Max) :
- 1.2mm
- Refresh Cycles :
- 8192
- Interleaved Burst Length :
- 1248
- Standby Current-Max :
- 0.004A
- Operating Mode :
- SYNCHRONOUS
- Supply Voltage :
- 3.3V
- Additional Feature :
- AUTO/SELF REFRESH
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- HTS Code :
- 8542.32.00.28
- I/O Type :
- COMMON
- Memory Width :
- 32
- Package / Case :
- 90-TFBGA
- Number of Ports :
- 1
- Terminal Position :
- BOTTOM
- Nominal Supply Current :
- 180mA
- Address Bus Width :
- 15b
- Data Bus Width :
- 32b
- Mounting Type :
- Surface Mount
- Terminal Finish :
- TIN SILVER COPPER
- Output Characteristics :
- 3-STATE
- Sequential Burst Length :
- 1248FP
- Number of Functions :
- 1
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Operating Temperature :
- -40°C~85°C TA
- Supply Voltage-Min (Vsup) :
- 3V
- Operating Supply Voltage :
- 3.3V
- Mount :
- Surface Mount
- Datasheets
- IS42S32160B-6BLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32160B-6BLI Overview
The IS42S32160B-6BLI, manufactured by Integrated Silicon Solution, Inc. (ISSI), is a high-performance 512Mbit DRAM designed for applications requiring substantial memory in a compact form factor. This memory module utilizes a parallel interface and is packaged in a 90-ball WBG array (WBGA), offering optimal performance for its class. The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32160B-6BLI is engineered to meet the rigorous demands of contemporary digital devices, ensuring reliability and efficiency for intensive operations.
IS42S32160B-6BLI Features
This DRAM module boasts several key features that make it an ideal solution for various memory-intensive applications. It offers a significant memory density of 512Mbit, allowing for robust data management and storage capabilities. The parallel interface ensures fast data transfer rates, which is crucial for high-performance computing systems. Additionally, the 90WBGA packaging is not only space-efficient but also enhances the module's thermal characteristics, making it suitable for compact devices with limited cooling options.
IS42S32160B-6BLI Applications
- Advanced Computing Systems: In high-end computing environments, the IS42S32160B-6BLI provides the necessary memory bandwidth and capacity to handle large datasets and complex algorithms efficiently.
- Consumer Electronics: Used in devices such as smart TVs and gaming consoles, where large memory capacity is essential for user interface responsiveness and multimedia processing.
- Automotive Applications: Ideal for use in automotive infotainment systems, offering robust performance that can handle dynamic in-car multimedia content delivery and navigation functionalities.
- Telecommunications: Supports telecommunications equipment, such as switches and routers, which require high memory capacities for data buffering and fast data access to maintain network efficiency.
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