IS42S16800E-7BL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Density :

128 Mb

Supply Voltage-Max (Vsup) :

3.6V

Package / Case :

54-TFBGA

Radiation Hardening :

No

Access Time :

5.4ns

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

3.3V

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Terminal Pitch :

0.8mm

Number of Functions :

1

Packaging :

Tray

Organization :

8MX16

Terminal Position :

BOTTOM

Refresh Cycles :

4096

Data Bus Width :

16b

Additional Feature :

AUTO/SELF REFRESH

Memory Width :

16

Memory Interface :

Parallel

Standby Current-Max :

0.002A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

DRAM

Interleaved Burst Length :

1248

Time@Peak Reflow Temperature-Max (s) :

10

Memory Size :

128Mb 8M x 16

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Sequential Burst Length :

1248FP

Length :

8mm

Nominal Supply Current :

130mA

Address Bus Width :

14b

Mount :

Surface Mount

Supply Voltage :

3.3V

ECCN Code :

EAR99

JESD-609 Code :

e1

Pin Count :

54

Number of Pins :

54

Clock Frequency :

143MHz

Memory Type :

Volatile

Voltage - Supply :

3V~3.6V

Number of Ports :

1

Supply Voltage-Min (Vsup) :

3V

Height Seated (Max) :

1.2mm

I/O Type :

COMMON

Output Characteristics :

3-STATE

Number of Terminations :

54

Pbfree Code :

yes

Operating Temperature :

0°C~70°C TA