IS42S16800E-75ETLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Organization :

8MX16

Memory Width :

16

Operating Supply Voltage :

3.3V

I/O Type :

COMMON

Refresh Cycles :

4096

Supply Voltage-Max (Vsup) :

3.6V

Mounting Type :

Surface Mount

Number of Terminations :

54

Terminal Finish :

Matte Tin (Sn) - annealed

Pin Count :

54

JESD-609 Code :

e3

Interleaved Burst Length :

1248

Terminal Position :

Dual

Clock Frequency :

133MHz

Length :

22.22mm

Sequential Burst Length :

1248FP

Memory Format :

DRAM

Access Time :

5.4ns

Density :

128 Mb

Operating Temperature :

-40°C~85°C TA

Memory Interface :

Parallel

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Packaging :

Tray

ECCN Code :

EAR99

Memory Type :

Volatile

Additional Feature :

AUTO/SELF REFRESH

Max Supply Current :

130mA

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Number of Functions :

1

Data Bus Width :

16b

RoHS Status :

RoHS Compliant

Number of Ports :

1

Memory Size :

128Mb 8M x 16

Number of Pins :

54

Standby Current-Max :

0.002A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

3.3V

Terminal Pitch :

0.8mm

Time@Peak Reflow Temperature-Max (s) :

10

Output Characteristics :

3-STATE

Voltage - Supply :

3V~3.6V

Address Bus Width :

14b

Nominal Supply Current :

130mA

Radiation Hardening :

No

Height Seated (Max) :

1.2mm

Supply Voltage-Min (Vsup) :

3V