IS42S16800E-75ETL
- Mfr.Part #
- IS42S16800E-75ETL
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PAR 54TSOP II
- Stock
- 25,213
- In Stock :
- 25,213
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Number of Pins :
- 54
- Terminal Pitch :
- 0.8mm
- Output Characteristics :
- 3-STATE
- Address Bus Width :
- 14b
- RoHS Status :
- RoHS Compliant
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tray
- Access Time :
- 5.4ns
- Mounting Type :
- Surface Mount
- Memory Type :
- Volatile
- Density :
- 128 Mb
- Memory Interface :
- Parallel
- Operating Mode :
- SYNCHRONOUS
- Length :
- 22.22mm
- Height Seated (Max) :
- 1.2mm
- Nominal Supply Current :
- 130mA
- Standby Current-Max :
- 0.002A
- Number of Functions :
- 1
- Refresh Cycles :
- 4096
- Data Bus Width :
- 16b
- Clock Frequency :
- 133MHz
- Pin Count :
- 54
- Additional Feature :
- AUTO/SELF REFRESH
- Sequential Burst Length :
- 1248FP
- Memory Size :
- 128Mb 8M x 16
- I/O Type :
- COMMON
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Supply Voltage-Min (Vsup) :
- 3V
- Operating Supply Voltage :
- 3.3V
- Memory Format :
- DRAM
- Voltage - Supply :
- 3V~3.6V
- Interleaved Burst Length :
- 1248
- Memory Width :
- 16
- Supply Voltage-Max (Vsup) :
- 3.6V
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Supply Voltage :
- 3.3V
- Number of Terminations :
- 54
- Operating Temperature :
- 0°C~70°C TA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Mount :
- Surface Mount
- Organization :
- 8MX16
- Number of Ports :
- 1
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Datasheets
- IS42S16800E-75ETL
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16800E-75ETL Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16800E-75ETL is a high-performance 128Mbit DRAM integrated circuit, engineered to meet the increasing demands for substantial data handling and storage across various industries. This component features a standard 54TSOP II package, optimized for robust reliability and enhanced durability. The IS42S16800E-75ETL is designed to support applications that require high-speed data processing and significant memory capacity, making it an ideal choice for manufacturers aiming to enhance their systems’ capabilities while ensuring cost-effectiveness and efficiency in high-volume production environments.
IS42S16800E-75ETL Features
The IS42S16800E-75ETL IC DRAM features a parallel interface, providing straightforward integration into existing architectures without the need for extensive re-engineering. With its 128Mbit capacity, the memory module efficiently handles large datasets and supports the smooth operation of resource-intensive applications. It is also designed to operate at a nominal power supply voltage, making it suitable for a broad range of industrial applications where energy efficiency is key.
IS42S16800E-75ETL Applications
- Automotive Systems: Utilized in advanced driver-assistance systems (ADAS) for processing and storing sensor data, enhancing vehicle safety and performance.
- Consumer Electronics: Integrated into devices such as smart TVs and gaming consoles, where large memory capacity is crucial for user interface responsiveness and multimedia processing.
- Telecommunications: Employed in network equipment like routers and switches, facilitating efficient data throughput and reliability essential for modern networking demands.
- Industrial Automation: Critical for use in PLCs and industrial PCs, where robust data handling capabilities are needed for complex process control and automation tasks.
- Medical Equipment: Applied in medical imaging systems, aiding in the quick processing and storage of large diagnostic images, thus improving the efficiency of healthcare services.
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