IS42S16800E-6BL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Packaging :

Tray

Voltage - Supply :

3V~3.6V

Terminal Position :

BOTTOM

Height Seated (Max) :

1.2mm

JESD-609 Code :

e1

Supply Voltage-Min (Vsup) :

3V

Nominal Supply Current :

150mA

Memory Width :

16

Density :

128 Mb

Number of Terminations :

54

Number of Pins :

54

Mount :

Surface Mount

Standby Current-Max :

0.002A

RoHS Status :

RoHS Compliant

Operating Supply Voltage :

3.3V

Number of Ports :

1

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Max (Vsup) :

3.6V

Clock Frequency :

166MHz

Data Bus Width :

16b

Package / Case :

54-TFBGA

Organization :

8MX16

Memory Format :

DRAM

Number of Functions :

1

I/O Type :

COMMON

ECCN Code :

EAR99

Sequential Burst Length :

1248FP

Time@Peak Reflow Temperature-Max (s) :

10

Memory Interface :

Parallel

Refresh Cycles :

4096

Pin Count :

54

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

0°C~70°C TA

Terminal Pitch :

0.8mm

Address Bus Width :

14b

Access Time :

5.4ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Interleaved Burst Length :

1248

Length :

8mm

Memory Type :

Volatile

Supply Voltage :

3.3V

Memory Size :

128Mb 8M x 16

Radiation Hardening :

No

Additional Feature :

AUTO/SELF REFRESH

Mounting Type :

Surface Mount

Output Characteristics :

3-STATE

Pbfree Code :

yes