IS42S16160G-6TL
- Mfr.Part #
- IS42S16160G-6TL
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PAR 54TSOP II
- Stock
- 179
- In Stock :
- 179
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Supply Voltage :
- 3.3V
- Operating Temperature :
- 0°C~70°C TA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Density :
- 256 Mb
- Output Characteristics :
- 3-STATE
- Max Supply Current :
- 160mA
- Number of Terminations :
- 54
- Height Seated (Max) :
- 1.2mm
- Operating Supply Voltage :
- 3.3V
- Refresh Cycles :
- 8192
- Standby Current-Max :
- 0.004A
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 54
- Voltage - Supply :
- 3V~3.6V
- I/O Type :
- COMMON
- Terminal Pitch :
- 0.8mm
- Memory Interface :
- Parallel
- Mount :
- Surface Mount
- Number of Ports :
- 1
- Operating Mode :
- SYNCHRONOUS
- Nominal Supply Current :
- 160mA
- Length :
- 22.22mm
- Supply Voltage-Min (Vsup) :
- 3V
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Data Bus Width :
- 16b
- Memory Format :
- DRAM
- Sequential Burst Length :
- 1248FP
- Terminal Position :
- Dual
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Width :
- 16
- Pin Count :
- 54
- Memory Type :
- Volatile
- Number of Functions :
- 1
- Interleaved Burst Length :
- 1248
- Clock Frequency :
- 166MHz
- Organization :
- 16MX16
- Mounting Type :
- Surface Mount
- Supply Voltage-Max (Vsup) :
- 3.6V
- Address Bus Width :
- 15b
- Access Time :
- 5.4ns
- ECCN Code :
- EAR99
- Memory Size :
- 256Mb 16M x 16
- Packaging :
- Tray
- Datasheets
- IS42S16160G-6TL
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160G-6TL Overview
The IS42S16160G-6TL from Integrated Silicon Solution, Inc. (ISSI) is a high-performance IC DRAM designed for applications requiring substantial memory in a compact form factor. This 256Mbit DRAM module, encapsulated in a space-efficient 54TSOP II package, ensures reliability and speed with a parallel interface, suitable for a wide range of advanced industrial and commercial applications. The utilization of the Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160G-6TL in your systems will significantly enhance performance due to its robust architecture and ability to handle intensive tasks efficiently.
IS42S16160G-6TL Features
This DRAM component is engineered with features that ensure superior performance and reliability:
- Capacity: 256Mbit of storage allows for significant data handling capabilities.
- Package Type: 54TSOP II package offers a practical form factor for dense board configurations.
- Speed: 6ns clock cycle and fast data access times enable high-speed operation essential for performance-critical applications.
- Power Efficiency: Operates with a low-voltage power supply, which reduces energy consumption and enhances system stability.
- Interface: Parallel interface facilitates easier integration into a variety of existing designs and architectures.
IS42S16160G-6TL Applications
- Consumer Electronics: Utilized in digital TVs and gaming consoles where large, fast memory is crucial for user experience.
- Automotive Systems: Supports advanced driver assistance systems (ADAS) by processing and storing sensor data quickly and reliably.
- Industrial Automation: In PLCs and industrial PCs where robust and reliable memory can handle complex tasks and harsh environments.
- Networking: Used in routers and switches for buffering data, enhancing throughput and network reliability.
- Mobile Devices: Suitable for mobile phones and tablets requiring high-density memory for multitasking and media storage.
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