IS42S16160D-75EBLI
- Mfr.Part #
- IS42S16160D-75EBLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 54TFBGA
- Stock
- 46,528
- In Stock :
- 46,528
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Memory Type :
- Volatile
- Density :
- 256 Mb
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Supply :
- 3V~3.6V
- Additional Feature :
- AUTO/SELF REFRESH
- JESD-609 Code :
- e1
- Organization :
- 16MX16
- Packaging :
- Tray
- Number of Pins :
- 54
- Terminal Position :
- BOTTOM
- Access Time :
- 5.5ns
- Memory Size :
- 256Mb 16M x 16
- I/O Type :
- COMMON
- Address Bus Width :
- 15b
- Mounting Type :
- Surface Mount
- Supply Voltage :
- 3.3V
- Standby Current-Max :
- 0.003A
- ECCN Code :
- EAR99
- Interleaved Burst Length :
- 1248
- Number of Terminations :
- 54
- Refresh Cycles :
- 8192
- Mount :
- Surface Mount
- Length :
- 13mm
- Number of Functions :
- 1
- Memory Width :
- 16
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Ports :
- 1
- Operating Mode :
- SYNCHRONOUS
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Sequential Burst Length :
- 1248FP
- Pin Count :
- 54
- Data Bus Width :
- 16b
- Pbfree Code :
- yes
- Terminal Pitch :
- 0.8mm
- Output Characteristics :
- 3-STATE
- Memory Interface :
- Parallel
- RoHS Status :
- RoHS Compliant
- Operating Supply Voltage :
- 3.3V
- Package / Case :
- 54-TFBGA
- Supply Voltage-Min (Vsup) :
- 3V
- Nominal Supply Current :
- 180mA
- Supply Voltage-Max (Vsup) :
- 3.6V
- Height Seated (Max) :
- 1.2mm
- Operating Temperature :
- -40°C~85°C TA
- Memory Format :
- DRAM
- Clock Frequency :
- 133MHz
- Datasheets
- IS42S16160D-75EBLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160D-75EBLI Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160D-75EBLI is a high-performance 256Mbit DRAM chip designed for use in a range of advanced digital applications. This integrated circuit is packaged in a compact 54-pin TFBGA, optimized for space-sensitive and power-efficient applications. The DRAM features a parallel interface, facilitating quick data transfer rates which are essential for high-speed computing environments. Its robust design and ISSI's commitment to quality make it an ideal choice for manufacturers looking to enhance system performance while maintaining reliability and efficiency.
IS42S16160D-75EBLI Features
This DRAM IC excels in providing high-density memory storage through its 256Mbit capacity. It is designed for easy integration into various circuit boards with its TFBGA packaging, ensuring minimal footprint and enhanced thermal management. The parallel interface ensures compatibility with a wide range of existing technologies, making it a versatile option for system upgrades or new designs. Furthermore, its operational efficiency is supported by a 75ns access time, which allows for rapid read/write cycles, boosting the overall speed of system operations.
IS42S16160D-75EBLI Applications
- Consumer Electronics: Utilized in devices such as TVs, gaming consoles, and home theater systems, where high memory bandwidth and low latency are crucial for enhancing user experience.
- Automotive Systems: Integrated into automotive infotainment systems to manage complex processing tasks required for multimedia content and navigation aids.
- Telecommunications: Applied in telecommunications infrastructure to provide the necessary memory capacity for handling high-speed data processing and storage demands.
- Industrial Automation: Helps in the control systems of industrial machinery, where durable and efficient memory solutions are required for reliable long-term operation.
- Mobile Devices: Supports the performance requirements of smartphones and tablets, ensuring smooth application functioning and user interface responsiveness.
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