IS42S16160B-7BI
- Mfr.Part #
- IS42S16160B-7BI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-LFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 54LFBGA
- Stock
- 23,714
- In Stock :
- 23,714
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Access Time :
- 5.4ns
- Number of Functions :
- 1
- Address Bus Width :
- 15b
- Memory Width :
- 16
- I/O Type :
- COMMON
- Sequential Burst Length :
- 1248FP
- Data Bus Width :
- 16b
- Output Characteristics :
- 3-STATE
- Pin Count :
- 54
- Operating Mode :
- SYNCHRONOUS
- Height Seated (Max) :
- 1mm
- Voltage - Supply :
- 3V~3.6V
- Memory Interface :
- Parallel
- Terminal Pitch :
- 0.8mm
- Number of Ports :
- 1
- Additional Feature :
- AUTO/SELF REFRESH
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Supply Voltage :
- 3.3V
- Supply Voltage-Max (Vsup) :
- 3.6V
- Clock Frequency :
- 143MHz
- Memory Format :
- DRAM
- Number of Pins :
- 54
- Packaging :
- Tray
- Refresh Cycles :
- 8192
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Memory Size :
- 256Mb 16M x 16
- Terminal Position :
- BOTTOM
- Density :
- 256 Mb
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Nominal Supply Current :
- 130mA
- Standby Current-Max :
- 0.001A
- Supply Voltage-Min (Vsup) :
- 3V
- Package / Case :
- 54-LFBGA
- Reach Compliance Code :
- not_compliant
- Supply Voltage :
- 3.3V
- Interleaved Burst Length :
- 1248
- Length :
- 13mm
- JESD-609 Code :
- e0
- Organization :
- 16MX16
- Memory Type :
- Volatile
- Number of Terminations :
- 54
- Operating Temperature :
- -40°C~85°C TA
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Datasheets
- IS42S16160B-7BI
Memory Integrated Silicon Solution, Inc. IS42S16160B-7BI Overview
The IS42S16160B-7BI from Integrated Silicon Solution, Inc. (ISSI) is a high-performance IC DRAM designed to meet the intensive demands of modern electronics. This 256Mbit DRAM operates in a parallel interface, housed in a compact 54LFBGA package, ensuring robust performance with minimal physical footprint. Ideal for applications requiring dense, high-speed memory, the IS42S16160B-7BI excels in delivering efficient data handling and reliability. Employing the Memory Integrated Silicon Solution, Inc. IS42S16160B-7BI in your designs guarantees advancements in operational efficiency and durability, making it a prime choice for bulk purchasing among B2B clients looking to elevate their product capabilities.
IS42S16160B-7BI Features
This DRAM module offers numerous features essential for contemporary applications, including a high data bandwidth and reduced power consumption. The device's synchronous design allows for precise control and rapid access, suitable for increasingly complex electronic environments. Additionally, the IS42S16160B-7BI's stability and adaptability in various temperature ranges enhance its suitability for diverse industrial requirements.
IS42S16160B-7BI Applications
- Consumer Electronics: Utilized in devices such as gaming consoles and high-performance computers, providing the necessary speed and capacity for enhanced user experiences.
- Automotive Systems: Supports advanced in-vehicle networks and infotainment systems, ensuring quick data processing and reliability under varied environmental conditions.
- Industrial Automation: Critical for PLCs and control systems that require robust and enduring memory solutions to handle complex tasks efficiently.
- Telecommunications: Integral to networking hardware like switches and routers, where large volume data storage and access are crucial for system performance.
- Medical Equipment: Applied in medical imaging systems, facilitating fast and precise data handling necessary for accurate diagnostics.
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