IS42S16160B-6TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

JESD-609 Code :

e3

Packaging :

Tray

Terminal Position :

Dual

Length :

22.22mm

Sequential Burst Length :

1248FP

Operating Supply Voltage :

3.3V

Memory Interface :

Parallel

Supply Voltage-Min (Vsup) :

3V

Standby Current-Max :

0.001A

Qualification Status :

Not Qualified

Refresh Cycles :

8192

Memory Size :

256Mb 16M x 16

Nominal Supply Current :

180mA

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Supply Voltage-Max (Vsup) :

3.6V

Number of Ports :

1

Pbfree Code :

yes

Density :

256 Mb

Terminal Pitch :

0.8mm

Mounting Type :

Surface Mount

Voltage - Supply :

3V~3.6V

Time@Peak Reflow Temperature-Max (s) :

40

I/O Type :

COMMON

Interleaved Burst Length :

1248

Additional Feature :

AUTO/SELF REFRESH

Output Characteristics :

3-STATE

Organization :

16MX16

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Memory Width :

16

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Pins :

54

Access Time :

5.4ns

Memory Type :

Volatile

Data Bus Width :

16b

Number of Functions :

1

Memory Format :

DRAM

Number of Terminations :

54

Operating Temperature :

0°C~70°C TA

Address Bus Width :

15b

Supply Voltage :

3.3V

Pin Count :

54

Height Seated (Max) :

1.2mm

Clock Frequency :

166MHz

Operating Mode :

SYNCHRONOUS