IS42S16160B-6B
- Mfr.Part #
- IS42S16160B-6B
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-LFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 54LFBGA
- Stock
- 49,457
- In Stock :
- 49,457
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Pin Count :
- 54
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Access Time :
- 5.4ns
- Additional Feature :
- AUTO/SELF REFRESH
- Clock Frequency :
- 166MHz
- Voltage - Supply :
- 3V~3.6V
- JESD-609 Code :
- e1
- Operating Temperature :
- 0°C~70°C TA
- Refresh Cycles :
- 8192
- Output Characteristics :
- 3-STATE
- Qualification Status :
- Not Qualified
- Memory Type :
- Volatile
- Package / Case :
- 54-LFBGA
- Mount :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Interleaved Burst Length :
- 1248
- Peak Reflow Temperature (Cel) :
- 260
- I/O Type :
- COMMON
- Operating Mode :
- SYNCHRONOUS
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Supply Voltage-Max (Vsup) :
- 3.6V
- Data Bus Width :
- 16b
- Memory Size :
- 256Mb 16M x 16
- Number of Functions :
- 1
- Memory Width :
- 16
- Memory Interface :
- Parallel
- Density :
- 256 Mb
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Organization :
- 16MX16
- ECCN Code :
- EAR99
- Packaging :
- Tray
- Number of Terminations :
- 54
- Mounting Type :
- Surface Mount
- Nominal Supply Current :
- 180mA
- Terminal Pitch :
- 0.8mm
- Height Seated (Max) :
- 1mm
- Number of Ports :
- 1
- Operating Supply Voltage :
- 3.3V
- Memory Format :
- DRAM
- Supply Voltage :
- 3.3V
- Standby Current-Max :
- 0.001A
- Length :
- 13mm
- Terminal Position :
- BOTTOM
- Address Bus Width :
- 15b
- Number of Pins :
- 54
- Sequential Burst Length :
- 1248FP
- Supply Voltage-Min (Vsup) :
- 3V
- Datasheets
- IS42S16160B-6B
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160B-6B Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160B-6B is a high-performance IC DRAM designed to meet the rigorous demands of various advanced digital applications. Boasting a capacity of 256Mbit and utilizing a parallel interface, this IC is encapsulated in a compact 54LFBGA package, offering robust data storage and retrieval capabilities. Its design is optimized for efficiency, making it an ideal choice for manufacturers looking to enhance system performance while maintaining cost-effectiveness and reliability in their products.
IS42S16160B-6B Features
This DRAM IC features a 256Mbit capacity, with high-speed operation and a parallel interface for efficient data handling. The 54LFBGA packaging not only reduces the physical footprint but also enhances the thermal and electrical performance, making it suitable for tightly packed system designs. The device operates at a nominal power supply voltage of 3.3V, further highlighting its suitability for low-power applications.
IS42S16160B-6B Applications
- Automotive Systems: Utilized in advanced driver-assistance systems (ADAS) to process and store large amounts of data in real time.
- Telecommunications: Serves as a buffer memory in telecom infrastructure, enabling efficient data flow management and storage for improved communication services.
- Consumer Electronics: Integrated into multimedia devices such as smart TVs and gaming consoles for enhanced graphics and user experience.
- Industrial Automation: Critical for data logging and process control in automated manufacturing systems, ensuring high reliability and performance consistency.
- Mobile Devices: Used in smartphones and tablets to handle increased memory requirements for applications and multitasking environments.
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