IS42S16100E-7BL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Interleaved Burst Length :

1248

JESD-609 Code :

e1

Output Characteristics :

3-STATE

Sequential Burst Length :

1248FP

Voltage - Supply :

3V~3.6V

RoHS Status :

RoHS Compliant

Memory Width :

16

Memory Size :

16Mb 1M x 16

Radiation Hardening :

No

Operating Temperature :

0°C~70°C TA

Number of Functions :

1

Organization :

1MX16

ECCN Code :

EAR99

Address Bus Width :

12b

Memory Interface :

Parallel

Operating Supply Voltage :

3.3V

Number of Ports :

1

Standby Current-Max :

0.002A

Number of Pins :

60

Supply Voltage-Max (Vsup) :

3.6V

Mounting Type :

Surface Mount

Supply Voltage-Min (Vsup) :

3V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Clock Frequency :

143MHz

Length :

10.1mm

Pin Count :

60

Additional Feature :

AUTO/SELF REFRESH

Refresh Cycles :

2048

Density :

16 Mb

HTS Code :

8542.32.00.02

Memory Format :

DRAM

Height Seated (Max) :

1.2mm

I/O Type :

COMMON

Access Time :

5.5ns

Packaging :

Tray

Package / Case :

60-TFBGA

Mount :

Surface Mount

Data Bus Width :

16b

Number of Terminations :

60

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Nominal Supply Current :

130mA

Memory Type :

Volatile

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

0.65mm

Supply Voltage :

3.3V