IS42S16100E-6TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Width :

16

Pbfree Code :

yes

Terminal Position :

Dual

Number of Functions :

1

ECCN Code :

EAR99

Operating Temperature :

0°C~70°C TA

HTS Code :

8542.32.00.02

Data Bus Width :

16b

Number of Pins :

50

JESD-609 Code :

e3

Mount :

Surface Mount

Additional Feature :

AUTO/SELF REFRESH

Operating Supply Voltage :

3.3V

I/O Type :

COMMON

Terminal Pitch :

0.8mm

Number of Terminations :

50

Refresh Cycles :

2048

Voltage - Supply :

3V~3.6V

Access Time :

5.5ns

Terminal Finish :

Matte Tin (Sn) - annealed

Pin Count :

50

RoHS Status :

RoHS Compliant

Memory Interface :

Parallel

Radiation Hardening :

No

Nominal Supply Current :

150mA

Sequential Burst Length :

1248FP

Address Bus Width :

12b

Supply Voltage-Min (Vsup) :

3V

Supply Voltage-Max (Vsup) :

3.6V

Mounting Type :

Surface Mount

Memory Type :

Volatile

Memory Format :

DRAM

Organization :

1MX16

Package / Case :

50-TSOP (0.400, 10.16mm Width)

Number of Ports :

1

Clock Frequency :

166MHz

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Memory Size :

16Mb 1M x 16

Peak Reflow Temperature (Cel) :

260

Interleaved Burst Length :

1248

Standby Current-Max :

0.002A

Supply Voltage :

3.3V

Density :

16 Mb

Height Seated (Max) :

1.2mm

Output Characteristics :

3-STATE

Length :

20.95mm

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tray