IS42S16100E-6BLI
- Mfr.Part #
- IS42S16100E-6BLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 16MBIT PARALLEL 60TFBGA
- Stock
- 13,940
- In Stock :
- 13,940
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- HTS Code :
- 8542.32.00.02
- Data Bus Width :
- 16b
- Number of Pins :
- 60
- Standby Current-Max :
- 0.004A
- Pin Count :
- 60
- Supply Voltage-Max (Vsup) :
- 3.6V
- Refresh Cycles :
- 2048
- Supply Current-Max :
- 0.17mA
- Voltage - Supply :
- 3V~3.6V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Pitch :
- 0.65mm
- Pbfree Code :
- yes
- Clock Frequency :
- 166MHz
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Number of Ports :
- 1
- Height Seated (Max) :
- 1.2mm
- I/O Type :
- COMMON
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- RoHS Status :
- RoHS Compliant
- Length :
- 10.1mm
- Operating Temperature :
- -40°C~85°C TA
- Power Supplies :
- 3.3V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Functions :
- 1
- Additional Feature :
- AUTO/SELF REFRESH
- Package / Case :
- 60-TFBGA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tray
- Mounting Type :
- Surface Mount
- Output Characteristics :
- 3-STATE
- JESD-609 Code :
- e1
- Interleaved Burst Length :
- 1248
- Terminal Position :
- BOTTOM
- Memory Width :
- 16
- Access Time :
- 5.5ns
- Memory Type :
- Volatile
- Memory Interface :
- Parallel
- Qualification Status :
- Not Qualified
- Memory Format :
- DRAM
- Operating Mode :
- SYNCHRONOUS
- Supply Voltage :
- 3.3V
- Number of Terminations :
- 60
- Organization :
- 1MX16
- Memory Size :
- 16Mb 1M x 16
- Supply Voltage-Min (Vsup) :
- 3V
- Sequential Burst Length :
- 1248FP
- Datasheets
- IS42S16100E-6BLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16100E-6BLI Overview
Introducing the cutting-edge Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16100E-6BLI, a high-performance IC DRAM boasting 16MBIT capacity in a compact 60TFBGA package. Designed to meet the rigorous demands of modern electronic devices, this dynamic random-access memory (DRAM) solution offers unparalleled reliability, efficiency, and versatility.
With its advanced parallel architecture, the IS42S16100E-6BLI delivers lightning-fast data access speeds, making it ideal for applications where speed is of the essence. Whether used in consumer electronics, telecommunications, or industrial machinery, this memory module ensures seamless performance and enhanced productivity.
Experience the epitome of memory excellence with the Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16100E-6BLI – the cornerstone of innovation in the digital age.
IS42S16100E-6BLI Features
- 16MBIT capacity
- Parallel architecture
- Compact 60TFBGA package
- High-performance IC DRAM
- Lightning-fast data access speeds
- Unparalleled reliability and efficiency
- Versatile application compatibility
IS42S16100E-6BLI Applications
- Consumer Electronics: Utilized in smartphones, tablets, and digital cameras for seamless multitasking and rapid data processing, enhancing user experience and device performance.
- Telecommunications: Integrated into network routers, switches, and base stations to facilitate high-speed data transmission, ensuring smooth communication channels and network stability.
- Industrial Machinery: Employed in automation systems, robotics, and control units to store and retrieve critical operational data swiftly, optimizing manufacturing processes and enhancing productivity.
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