IS42S16100E-5TL
- Mfr.Part #
- IS42S16100E-5TL
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 50-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 16MBIT PAR 50TSOP II
- Stock
- 31,721
- In Stock :
- 31,721
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Supply Voltage-Min (Vsup) :
- 3V
- Number of Terminations :
- 50
- Terminal Pitch :
- 0.8mm
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- I/O Type :
- COMMON
- Data Bus Width :
- 16b
- Memory Size :
- 16Mb 1M x 16
- Sequential Burst Length :
- 1248FP
- Access Time :
- 5ns
- Address Bus Width :
- 12b
- Output Characteristics :
- 3-STATE
- Voltage - Supply :
- 3V~3.6V
- Supply Voltage :
- 3.3V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Density :
- 16 Mb
- Refresh Cycles :
- 2048
- Length :
- 20.95mm
- Memory Interface :
- Parallel
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- HTS Code :
- 8542.32.00.02
- Pin Count :
- 50
- Nominal Supply Current :
- 170mA
- Operating Supply Voltage :
- 3.3V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Clock Frequency :
- 200MHz
- Packaging :
- Tray
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Additional Feature :
- AUTO/SELF REFRESH
- Organization :
- 1MX16
- Memory Format :
- DRAM
- Height Seated (Max) :
- 1.2mm
- Number of Pins :
- 50
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Functions :
- 1
- Memory Type :
- Volatile
- Memory Width :
- 16
- Number of Ports :
- 1
- JESD-609 Code :
- e3
- Interleaved Burst Length :
- 1248
- Terminal Position :
- Dual
- Package / Case :
- 50-TSOP (0.400, 10.16mm Width)
- Supply Voltage-Max (Vsup) :
- 3.6V
- Standby Current-Max :
- 0.002A
- Operating Temperature :
- 0°C~70°C TA
- Datasheets
- IS42S16100E-5TL
[Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16100E-5TL] Overview
Introducing the cutting-edge IS42S16100E-5TL from Integrated Silicon Solution, Inc. (ISSI), a leading innovator in memory solutions. This IC DRAM, with a capacity of 16MBIT, is meticulously crafted to meet the rigorous demands of modern electronic devices. Encased in a robust 50TSOP II package, this memory component promises unparalleled performance and reliability, making it the top choice for businesses seeking high-quality memory solutions.
IS42S16100E-5TL Features
- High Capacity: With a staggering 16MBIT capacity, this IC DRAM ensures ample storage space for diverse applications.
- Fast Performance: Boasting lightning-fast PAR (Page Access Read) speeds, this memory component enhances the overall efficiency of electronic devices.
- Durable Design: Encapsulated in a resilient 50TSOP II package, this memory module offers exceptional durability, safeguarding against environmental factors and mechanical stress.
- Reliable Operation: Engineered by ISSI, a trusted name in the industry, this memory component delivers consistent and dependable performance, meeting the stringent standards of B2B customers.
IS42S16100E-5TL Applications
- Industrial Automation Systems: The IS42S16100E-5TL finds widespread application in industrial automation systems, where its high capacity and fast performance enhance data processing and control functions, ensuring seamless operation in manufacturing environments.
- Telecommunication Infrastructure: Deployed in telecommunication infrastructure, this memory component facilitates the storage and retrieval of critical data, enabling efficient communication networks for businesses and consumers alike.
- Embedded Systems: Integrated into embedded systems, the IS42S16100E-5TL serves as a reliable storage solution, supporting the operation of various electronic devices such as medical equipment, automotive systems, and consumer electronics.
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