IS42S16100C1-7B
- Mfr.Part #
- IS42S16100C1-7B
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 16MBIT PARALLEL 60TFBGA
- Stock
- 13,301
- In Stock :
- 13,301
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Package / Case :
- 60-TFBGA
- Number of Terminations :
- 60
- Output Characteristics :
- 3-STATE
- Supply Voltage :
- 3.3V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Memory Type :
- Volatile
- ECCN Code :
- EAR99
- Sequential Burst Length :
- 1248FP
- Memory Size :
- 16Mb 1M x 16
- Height Seated (Max) :
- 1.2mm
- Clock Frequency :
- 143MHz
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Length :
- 10.1mm
- Operating Mode :
- SYNCHRONOUS
- Data Bus Width :
- 16b
- Standby Current-Max :
- 0.002A
- Access Time :
- 5.5ns
- JESD-609 Code :
- e0
- Number of Functions :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Supply :
- 3V~3.6V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 0°C~70°C TA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Pitch :
- 0.65mm
- Power Supplies :
- 3.3V
- Memory Format :
- DRAM
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 60
- Memory Interface :
- Parallel
- HTS Code :
- 8542.32.00.02
- Memory Width :
- 16
- Number of Ports :
- 1
- Supply Current-Max :
- 0.14mA
- Packaging :
- Tray
- Surface Mount :
- yes
- I/O Type :
- COMMON
- Supply Voltage-Max (Vsup) :
- 3.6V
- Supply Voltage-Min (Vsup) :
- 3V
- Terminal Position :
- BOTTOM
- Refresh Cycles :
- 4096
- Pin Count :
- 60
- Additional Feature :
- AUTO/SELF REFRESH
- Interleaved Burst Length :
- 1248
- Organization :
- 1MX16
- Datasheets
- IS42S16100C1-7B
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16100C1-7B Overview
The IS42S16100C1-7B from Integrated Silicon Solution, Inc. (ISSI) represents a high-performance DRAM solution optimized for the rigorous demands of high-throughput applications. This 16Mbit DRAM is encapsulated in a compact 60TFBGA package, offering robust reliability and superior performance. Engineered for parallel interface configurations, this memory module is an ideal choice for developers looking to enhance the data processing capabilities of their systems. With its combination of high-density storage and ease of integration, the Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16100C1-7B excels in a variety of demanding applications, making it highly sought after for bulk purchases by business-to-business customers.
IS42S16100C1-7B Features
The IS42S16100C1-7B DRAM module offers several key features that make it a versatile and essential component in modern electronic systems. Its 16Mbit storage capacity allows for substantial data handling, while the 60TFBGA package ensures minimal space usage on printed circuit boards. The parallel interface facilitates fast data transfer rates, making it suitable for applications requiring quick read and write operations. This memory module is designed to operate at a power supply voltage of 3.3V, optimizing power efficiency without compromising performance.
IS42S16100C1-7B Applications
- Consumer Electronics: Used in devices such as digital cameras and MP3 players, where high-speed data buffering is necessary to manage intensive media processing tasks.
- Communication Devices: Employs in smartphones and tablets to enhance multitasking capabilities and improve user interface responsiveness.
- Automotive Systems: Integral for advanced driver-assistance systems (ADAS), where rapid data processing is crucial for real-time decision making.
- Industrial Automation: Applied in programmable logic controllers and industrial PCs, facilitating efficient handling of complex operations and control tasks.
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